Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size

Xi Chen; Min Gu

doi:10.34133/ultrafastscience.0001

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Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size

Research Article | Updated：2024-10-22

- Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size
- 超快科学（英文） 2023年3卷第1期
- Affiliations：
  
  a Institute of Photonic Chips, University of Shanghai for Science and Technology, Shanghai 200093, China.b Centre for Artificial-Intelligence Nanophotonics, School of Optical-Electrical and Computer Engineering,University of Shanghai for Science and Technology,Shanghai,China,200093
- Author bio：
- Funds：
  
  This work is supported by the National Natural Science Foundation of China (grant no. 11974247), the Shanghai Science & Technology Commission (21DZ1100500), and the Shanghai Municipal Science and Technology Major Project.
- DOI：10.34133/ultrafastscience.0001
  中图分类号：
- 纸质出版日期：2023，
- Accepted：
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Xi Chen, Min Gu. 2023: Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size. 超快科学, 3(1).

Xi Chen, Min Gu. 2023: Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size. Ultrafast Science, 3(1).
Xi Chen, Min Gu. 2023: Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size. 超快科学, 3(1). DOI： 10.34133/ultrafastscience.0001

Xi Chen, Min Gu. 2023: Two-Beam Ultrafast Laser Scribing of Graphene Patterns with 90-nm Subdiffraction Feature Size. Ultrafast Science, 3(1). DOI： 10.34133/ultrafastscience.0001

摘要

The fabrication of high-resolution laser-scribed graphene devices is crucial to achieving large surface areas and thus performance breakthroughs. However

since the investigation mainly focuses on the laser-induced reduction of graphene oxide

the single-beam scribing provides a tremendous challenge to realizing subdiffraction features of graphene patterns. Here

we present an innovative 2-beam laser scribing pathway for the fabrication of subdiffraction graphene patterns. First

an oxidation reaction of highly reduced graphene oxide can be controllably driven by irradiation of a 532-nm femtosecond laser beam. Based on the oxidation mechanism

a 2-beam laser scribing was performed on graphene oxide thin films

in which a doughnut-shaped 375-nm beam reduces graphene oxide and a spherical 532-nm ultrafast beam induces the oxidation of laser-reduced graphene oxide. The spherical beam turns the highly reduced graphene oxide (reduced by the doughnut-shaped beam) to an oxidized state

splitting the laser-scribed graphene oxide line into 2 subdiffraction featured segments and thus forming a laserscribed graphene/oxidized laser-scribed graphene/laser-scribed graphene line. Through the adjustment of the oxidation beam power

the minimum linewidth of laser-scribed graphene was measured to be 90 nm. Next

we fabricated patterned supercapacitor electrodes containing parallel laser-scribed graphene lines with subdiffraction widths and spacings. An outstanding gravimetric capacitance of 308 F/g

which is substantially higher than those of reported graphene-based supercapacitors

has been delivered. The results offer a broadly accessible strategy for the fabrication of high-performance graphene-based devices including high-capacity energy storage

high-resolution holograms

high-sensitivity sensors

triboelectric nanogenerators with high power densities

and artificial intelligence devices with high neuron densities.

Abstract