FOLLOWUS
Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy
- 超快科学（英文） 2022年2卷第6期
- Affiliations：
a State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University,Beijing,P. R. China,100084
- Author bio：
- Funds：This work is financially supported by the National Natural Science Foundation of China (no. 62075115) and Tsinghua University Initiative Scientific Research Program.
DOI：10.34133/ultrafastscience.0002
中图分类号：纸质出版日期：2022，
- Accepted：
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Yun-Ke Zhou, Xiao-Ze Li, Qian-Ni Zhou, Ren-Hao Xing, Yan Zhang, Benfeng Bai, Hong-Hua Fang, and Hong-Bo Sun. 2022: Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy. 超快科学, 2022(6).
Yun-Ke Zhou, Xiao-Ze Li, Qian-Ni Zhou, Ren-Hao Xing, Yan Zhang, Benfeng Bai, Hong-Hua Fang, Hong-Bo Sun. 2022: Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy. Ultrafast Science, 2022(6).
Yun-Ke Zhou, Xiao-Ze Li, Qian-Ni Zhou, Ren-Hao Xing, Yan Zhang, Benfeng Bai, Hong-Hua Fang, and Hong-Bo Sun. 2022: Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy. 超快科学, 2022(6). DOI： 10.34133/ultrafastscience.0002
Yun-Ke Zhou, Xiao-Ze Li, Qian-Ni Zhou, Ren-Hao Xing, Yan Zhang, Benfeng Bai, Hong-Hua Fang, Hong-Bo Sun. 2022: Transient Superdiffusion of Energetic Carriers in Transition Metal Dichalcogenides Visualized by Ultrafast Pump-Probe Microscopy. Ultrafast Science, 2022(6). DOI： 10.34133/ultrafastscience.0002
摘要
Because of the strong Coulomb interaction and quantum confinement effect
2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications
such as excitonic circuits
switches
and transistors
it is of paramount importance for understanding the tical properties of transition metal dichalcogenides. Furthermore
the strong quantum confinement in 2-dimensional space introduces exotic properties
such as enhanced phonon bottlenecking effect
many-body interaction of excitons
and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work
we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2
MoWSe2
and MoSe2
with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time
followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2
the energetic carrier-induced exciton expansion is much more effective
with diffusivity up to 668 and 2295 cm2 s−1
respectively.However
the “cold” exciton transport is trap limited in MoWSe2 and MoSe2
leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.
Abstract
Because of the strong Coulomb interaction and quantum confinement effect
2-dimensional transition metal dichalcogenides possess a stable excitonic population. To realize excitonic device applications
such as excitonic circuits
switches
and transistors
it is of paramount importance for understanding the optical properties of transition metal dichalcogenides. Furthermore
the strong quantum confinement in 2-dimensional space introduces exotic properties
such as enhanced phonon bottlenecking effect
many-body interaction of excitons
and ultrafast nonequilibrium exciton–exciton annihilation. Exciton diffusion is the primary energy dissipation process and a working horse in excitonic devices. In this work
we investigated time-resolved exciton propagation in monolayer semiconductors of WSe2
MoWSe2
and MoSe2
with a home-built femtosecond pump-probe microscope. We observed ultrafast exciton expansion behavior with an equivalent diffusivity of up to 502 cm2 s−1 at the initial delay time
followed by a slow linear diffusive regime (20.9 cm2 s−1) in the monolayer WSe2. The fast expansion behavior is attributed to energetic carrier-dominated superdiffusive behavior. We found that in the monolayers MoWSe2 and MoSe2
the energetic carrier-induced exciton expansion is much more effective
with diffusivity up to 668 and 2295 cm2 s−1
respectively. However
the “cold” exciton transport is trap limited in MoWSe2 and MoSe2
leading to negative diffusion behavior at later time. Our findings are helpful to better understand the ultrafast nonlinear diffusive behavior in strongly quantum-confined systems. It may be harnessed to break the limit of conventional slow diffusion of excitons for advancing more efficient and ultrafast optoelectronic devices.
关键词
transition metal dichalcogenidesexciton diffusionhot carrierTransient absorption microscopyultrafast spatiotemporal measurements
Keywords
transition metal dichalcogenidesexciton diffusionhot carrierTransient absorption microscopyultrafast spatiotemporal measurements
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