All-dielectric metasurfaces offer low material loss and strong field localization and are

therefore

well suited for ultrathin and compact optical devices for electomagnetic wave manipulation at the nanoscale. All-silicon dielectric metasurfaces

in particular

may additionally offer the desired compatibility with complementary metal-oxide semiconductor technology and

hence

are ideal candidates for large-scale monolithic integration on a photonic chip. However

in conventional silicon microfabrication approaches

the combination of mask photolithography with reactive ion etching usually involves expensive masks and multiple preprocessing stages leading to increased cost and fabrication times. In this work

a single-step lithographical approach is proposed for the realization of all-silicon dielectric resonant metasurfaces that involves femtosecond laser processing of silicon below ablation threshold in combination with subsequent wet chemical etching. The method exploits the different etching rate between laser-modified and untreated regions

enabling large-area fabrication of patterned silicon surfaces in a facile and cost-efficient manufacturing approach. It is presented how two-dimensional silicon micro/nanostructures with controllable features

such as nanocones

can be effectively generated and

as a proof of concept

an all-silicon dielectric metasurface device supporting antiferromagnetic order is experimentally demonstrated.